AddOn HP 627814-B21 Compatible Factory Original 32GB DDR3-1066MHz Registered ECC Quad Rank x4 1.35V 240-pin CL7 Very Low Profile RDIMM
$412.99 CAD
AddOn HP 627814-B21 Compatible Factory Original 32GB DDR3-1066MHz Registered ECC Quad Rank x4 1.35V 240-pin CL7 Very Low Profile RDIMM
$412.99 CAD
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AddOn HP 627814-B21 Compatible Factory Original 32GB DDR3-1066MHz Registered ECC Quad Rank x4 1.35V 240-pin CL7 Very Low Profile RDIMM
This HP 627814-B21 compatible 32GB DDR3-1066MHz quad rank registered ECC 1.35V 240-pin CL7 factory original very low profile RDIMM is 100% guaranteed to be compatible with your system and to work right the first time. All of our server memory is built to strict JEDEC standards at one of the tier 1 facilities (Samsung, Micron, or Hynix). Our products are also guaranteed by federal law to not affect or void OEM warranties.
- 1066 MHz speed to execute routine softwares at a steady pace
- 32 GB of memory to maintain symmetry with processor and hard drive and bring out the ultimate computing experience
- 240-pin-pin DDR3 SDRAM operates at an effective bus speed with minimal power consumption and as a result, you get optimal computer performance with an improved memory heat dissipation
| Product Type: RAM Module |
| Country Of Origin: China |
| Brand Name: AddOn |
| Form Factor: RDIMM |
| Manufacturer: AddOn |
| Product Name: 32 GB DDR3 SDRAM Memory Module |
| Manufacturer Part Number: 627814-B21-AM |
| Manufacturer Website Address: http://www.addoncomputer.com |
| Number Of Pins: 240-pin |
| Limited Warranty: Lifetime |
| Thickness: 0.30" (7.62 mm) |
| Weight (Approximate): 8 oz (226.80 g) |
| Taa Compliant: No |
| Length: 5.50" (139.70 mm) |
| Feature1: 1066 MHz speed to execute routine softwares at a steady pace |
| Feature2: 32 GB of memory to maintain symmetry with processor and hard drive and bring out the ultimate computing experience |
| Feature3: 240-pin-pin DDR3 SDRAM operates at an effective bus speed with minimal power consumption and as a result, you get optimal computer performance with an improved memory heat dissipation |